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Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: Failure mechanisms...
- Source :
-
Journal of Applied Physics . 12/1/1997, Vol. 82 Issue 11, p5547. 8p. 16 Graphs. - Publication Year :
- 1997
-
Abstract
- Describes a failure mechanism of AlGaAs/InGaAs pseudomorphic high electron mobility transistors after carrier dc accelerated testing. Characterization of hot carrier effects by means of gate current measurements and electroluminescence spectroscopy; Measurements of direct current, pulsed and low-frequency ac; Electron traps at gate-to-drain electric fields.
- Subjects :
- *ELECTRON mobility
*TRANSISTORS
*CATALYST supports
*ELECTROLUMINESCENCE
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 82
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 34134
- Full Text :
- https://doi.org/10.1063/1.366413