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Metal Carbides for Band-Edge Work Function Metal Gate CMOS Devices.
- Source :
-
IEEE Transactions on Electron Devices . Sep2008, Vol. 55 Issue 9, p2469-2474. 6p. - Publication Year :
- 2008
-
Abstract
- Various metal carbides (TaC, HfC, WC, and VC) were thoroughly investigated for metal gate CMOS devices with band-edge work functions (WFs). It is found that TaC and HfC are more suitable for the CMOS device application among the various metal carbides. HfC is demonstrated to be a good candidate for NMOS because of its low WF and excellent thermal stability, while TaC + Al shows a high WF and good thermal stability suitable for PMOS device application. In addition, HfC and TaC have a wide range of WF tunability using thin LaN and AIN interlayer or introduction of La and Al into the metal carbides. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 34180698
- Full Text :
- https://doi.org/10.1109/TED.2008.927946