DEPENDENCIA DE LA RESPUESTA ÓPTICA CON EL DECAPADO QUÍMICO DE PELÍCULAS DE Ga1-xInxAsySb1-y.

Gal-xInxAsySbl-y epitaxial films grown by Liquid Phase Epitaxy were etched by using an acid solution during different dipping times. The etching rate was obtained by means of thickness measurements for different wetting times. The optical response and its variation with etching were measured by photoluminescence technique. The differences in the energy position of optical response for the different etching times were associated to the removal of the most superficial oxide layers. We found a good material to cover the substrate surface to obtain the etching rate. [ABSTRACT FROM AUTHOR]