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Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment.
- Source :
-
Applied Physics Letters . 8/25/2008, Vol. 93 Issue 8, p082105. 3p. 4 Graphs. - Publication Year :
- 2008
-
Abstract
- The metal gate/high-k dielectric/III-V semiconductor band alignment is one of the most technologically important parameters. We report the band offsets of the Al/Al2O3/GaAs structure and the effect of GaAs surface treatment. The energy barrier at the Al2O3 and sulfur-passivated GaAs interface is found to be 3.0±0.1 eV whereas for the unpassivated or NH4OH-treated GaAs is 3.6 eV. At the Al/Al2O3 interface, all samples yield the same barrier height of 2.9±0.2 eV. With a band gap of 6.4±0.05 eV for Al2O3, the band alignments at both Al2O3 interfaces are established. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 93
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 34198800
- Full Text :
- https://doi.org/10.1063/1.2976676