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The effect of antimony-doping on Ge2Sb2Te5, a phase change material
- Source :
-
Thin Solid Films . Oct2008, Vol. 516 Issue 23, p8810-8812. 3p. - Publication Year :
- 2008
-
Abstract
- Abstract: The structural and electrical resistance properties of excess-Sb Ge2Sb2+ x Te5 (Sb-GST) films were investigated. As the Sb-doping concentration was increased, the face center cubic structure of Sb-GST films was no longer observed, at Sb concentrations exceeding 27%, the amorphous phase directly changed to hexagonal closed-packed structures. The crystallization temperature of the 27% Sb-GST film was 15 °C higher than that of the Ge2Sb2Te5 (GST) film. The activation energies of the Sb-GST films also were greater than those of the GST films. These results indicate an increase in the stability of the Sb-doped films in the amorphous state compared with GST films. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 516
- Issue :
- 23
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 34200189
- Full Text :
- https://doi.org/10.1016/j.tsf.2008.02.014