Back to Search
Start Over
Numerical band-to-band tunnelling model for radio-frequency silicon tunnel diode with negative-differential resistance.
- Source :
-
Electronics Letters (Institution of Engineering & Technology) . 11/6/2008, Vol. 44 Issue 23, p1379-1381. 3p. 3 Graphs. - Publication Year :
- 2008
-
Abstract
- The low resistive band-to-band tunnelling (BTBT) model has been developed for radio-frequency (RF) silicon negative differential resistance (NDR) device simulation on the TCAD platform. The BTBT mechanism in a forward-biased tunnel junction is modelled based on a generation–recombination term in a continuity equation by considering a spatially varying electric field through the tunnelling distance. Using this model, DC/AC characteristics of silicon NDR devices have been successfully described on a numerical device simulation platform. The calculated speed index from the junction capacitance and peak tunnelling current of the tunnel diode shows good agreement with experiments. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 44
- Issue :
- 23
- Database :
- Academic Search Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 35054970
- Full Text :
- https://doi.org/10.1049/el:20082737