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High-temperature operation of 1.26 µm Fabry-Perot laser with InGaAs metamorphic buffer on GaAs substrate.
- Source :
-
Electronics Letters (Institution of Engineering & Technology) . 11/6/2008, Vol. 44 Issue 23, p1359-1360. 2p. 4 Graphs. - Publication Year :
- 2008
-
Abstract
- A 1.26 µm ridge waveguide laser diode with an InGaAs metamorphic buffer on a GaAs substrate grown by metal-organic vapour-phase epitaxy has been successfully developed. This laser has achieved the highest operating temperature (173°C) for continuous-wave operation reported for a metamorphic laser. [ABSTRACT FROM AUTHOR]
- Subjects :
- *LASERS
*WAVEGUIDES
*SUBSTRATES (Materials science)
*SURFACES (Technology)
*EPITAXY
Subjects
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 44
- Issue :
- 23
- Database :
- Academic Search Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 35054983
- Full Text :
- https://doi.org/10.1049/el:20082657