Cite
Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique
MLA
Irisawa, T., et al. “Ge Wire MOSFETs Fabricated by Three-Dimensional Ge Condensation Technique.” Thin Solid Films, vol. 517, no. 1, Nov. 2008, pp. 167–69. EBSCOhost, https://doi.org/10.1016/j.tsf.2008.08.054.
APA
Irisawa, T., Numata, T., Hirashita, N., Moriyama, Y., Nakaharai, S., Tezuka, T., Sugiyama, N., & Takagi, S. (2008). Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique. Thin Solid Films, 517(1), 167–169. https://doi.org/10.1016/j.tsf.2008.08.054
Chicago
Irisawa, T., T. Numata, N. Hirashita, Y. Moriyama, S. Nakaharai, T. Tezuka, N. Sugiyama, and S. Takagi. 2008. “Ge Wire MOSFETs Fabricated by Three-Dimensional Ge Condensation Technique.” Thin Solid Films 517 (1): 167–69. doi:10.1016/j.tsf.2008.08.054.