Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100-1550 nm range.

Authors :: Braun[a], W.
Dowd[b], P.
Guo[c], C.-Z.
Chen[d], S.-L.
Ryu[e], C. M.
Koelle[f], U.
Johnson, S. R.
Zhang, Y.-H.
Tomm, J. W.
Elsasser, T.
Smith, D. J.
Source :: Journal of Applied Physics. 9/1/2000, Vol. 88 Issue 5, p3004. 11p. 2 Black and White Photographs, 1 Diagram, 3 Charts, 13 Graphs.
Publication Year :: 2000
Abstract: Presents a novel semiconductor quantum well (QW) structure consisting of alternating (In,Ga)As and Ga(P,As,Sb0 layers grown pseudomorphically on a GaAs substrate by all-solid-source molecular beam epitaxy. Determination of the band gap of the QW by the thickness and composition of both types of layers; Explanation for the strong room-temperature photoluminescence.

Subjects :: *QUANTUM wells
*GALLIUM arsenide
*MOLECULAR beam epitaxy
*PHOTOLUMINESCENCE

Tools