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Diffusion barrier performance of Zr–N/Zr bilayered film in Cu/Si contact system
- Source :
-
Microelectronics Reliability . Nov2008, Vol. 48 Issue 11/12, p1800-1803. 4p. - Publication Year :
- 2008
-
Abstract
- Abstract: Zr–N/Zr bilayered film as a diffusion barrier between Cu and Si is evaluated. The thermal stability of the diffusion barrier is investigated by annealing the Cu/Zr–N/Zr/Si samples in N2 for an hour. XRD, SEM and AES results for the above contact systems after annealing at 700°C show that Cu film has preferential (111) crystal orientation and no diffraction peaks of Cu3Si and a Cu–Zr–Si ternary compound are observed for all Cu/Zr–N/Zr/Si contact systems. In addition, the atomic distribution of Zr and Si is evident and grows with increasing temperature up to 700°C, which corresponds to the Zr–Si phase having low contact resistivity. Low contact resistivity and high thermal stability diffusion barrier can be expected by the application of the Zr–N/Zr bilayered film as a diffusion barrier between Cu and Si. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00262714
- Volume :
- 48
- Issue :
- 11/12
- Database :
- Academic Search Index
- Journal :
- Microelectronics Reliability
- Publication Type :
- Academic Journal
- Accession number :
- 35206358
- Full Text :
- https://doi.org/10.1016/j.microrel.2008.08.003