Hysteresis in In2O3:Zn nanowire field-effect transistor and its application as a nonvolatile memory device.

Control and utilization of hysteresis in nanodevices is an important issue. In this paper, we show an enormous hysteresis in zinc-doped In2O3 nanowire field-effect transistors. Various measurements including changing the operating atmosphere, ozone treatment, and surface passivation were performed to understand and control the hysteresis. The hysteresis could be readily controlled by modifying the nanowire surface. Utilizing the hysteresis, the as-fabricated devices can function as nonvolatile memory elements with high charge storage stability exceeding 4 h. We propose that chemical species such as water molecules adsorbed on the devices and surface oxygen defects in the amorphous layer mainly originated from Zn2+ substitution of In3+ are the main causes of the large hysteresis and the nonvolatile memory effect. [ABSTRACT FROM AUTHOR]