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Insights and Advances on the Design of CMOS Sinh Companding Filters.

Authors :
Katsiamis, Andreas G.
Glaros, Konstantinos N.
Drakakis, Emmanuel M.
Source :
IEEE Transactions on Circuits & Systems. Part I: Regular Papers. Oct2008, Vol. 55 Issue 9, p2539-2550. 12p. 3 Black and White Photographs, 7 Diagrams, 2 Charts, 9 Graphs.
Publication Year :
2008

Abstract

The scope of this paper is to present certain insights and advances towards the synthesis and transistor-level implementation of high dynamic range (>120 dB), micropower, CMOS Sinh companding filters. In particular, we present detailed technical insights on a recently proposed Sinh integrator which may serve as the basic building block for higher-order filter structures. The particular integrator exhibits a promising simulated linearity performance mainly because it does not rely on the complementarity of both N- and P-type MOS transistors to achieve its Class-AB operation. Rather, it is designed with single-type devices in its signal processing path. The integrator is evaluated through detailed simulation results obtained by performing both large-signal transient and periodic steady-state (PSS) analyses in Cadence IC Design Framework® with the parameters of the commercially available AMS 0.35-μm CMOS process. SNR, SNDR, IP3 and mismatch are some of the performance figures reported in this work. A detailed head-to-head comparison with a typical pseudo-differential Class-AB Log-domain integrator, designed in the same technology and with identical specifications, is also performed in order to reveal any potential benefits of the Sinh circuit paradigm. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
15498328
Volume :
55
Issue :
9
Database :
Academic Search Index
Journal :
IEEE Transactions on Circuits & Systems. Part I: Regular Papers
Publication Type :
Periodical
Accession number :
35355041
Full Text :
https://doi.org/10.1109/TCSI.2008.921037