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Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch.

Authors :
Banno, Naoki
Sakamoto, Toshitsugu
Iguchi, Noriyuki
Sunamura, Hiroshi
Terabe, Kazuya
Hasegawa, Tsuyoshi
Aono, Masakazu
Source :
IEEE Transactions on Electron Devices. Nov2008, Vol. 55 Issue 11, p3283-3287. 5p.
Publication Year :
2008

Abstract

A novel solid-electrolyte nonvolatile switch that we previously developed for programmable large-scale-integration circuits turns on or off when a conducting Cu budge is formed or dissolved in the solid electrolyte. Cu+ ion migration and an electrochemical reaction are involved in the switching process. For logic applications, we need to adjust its turn-on voltage (VON), which was too small to maintain the conductance state during logic operations. In this paper, we clarified that VON is mainly affected by the rate of Cu+ ion migration in the solid electrolyte. Considering the relationship between the migration rate and VON, we replaced the former electrolyte, Cu2-αS, with Ta2O5, which enabled us to appropriately adjust VON with a smaller Cu+ ion diffusion coefficient. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
55
Issue :
11
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
35406081
Full Text :
https://doi.org/10.1109/TED.2008.2004246