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Si-nanoclusters embedded into epitaxial rare earth oxides: Potential candidate for nonvolatile memory applications
- Source :
-
Microelectronic Engineering . Dec2008, Vol. 85 Issue 12, p2350-2353. 4p. - Publication Year :
- 2008
-
Abstract
- Abstract: Using an unconventional approach, single crystalline Si-nanoclusters (Si-NCs) with uniform size and higher density were embedded into epitaxial rare earth oxide with two-dimensional spatial arrangements at a defined distance from the substrate using solid source molecular beam epitaxy (MBE) technique. The incorporated Si-NCs with average size of 5nm and density of 2×1012 cm−2 exhibit charge storage capacity with promising retention (∼107 s) and endurance (105 write/erase cycles) characteristics. The Pt/Gd2O3 (Si-NC)/Si (MOS) basic memory cells with embedded Si-nanoclusters display large programming window (∼1.5–2V) and fast writing speed. With such properties demonstrated, we believe that the Si-NCs embedded in epitaxial Gd2O3 could be potential candidate for high density nonvolatile memory devices in the future. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 01679317
- Volume :
- 85
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Microelectronic Engineering
- Publication Type :
- Academic Journal
- Accession number :
- 35557038
- Full Text :
- https://doi.org/10.1016/j.mee.2008.09.030