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25 Gbit/s 100°C operation of highly reliable InGaAs/GaAsP-VCSELs.
- Source :
-
Electronics Letters (Institution of Engineering & Technology) . 1/1/2009, Vol. 45 Issue 1, p45-46. 2p. 4 Graphs. - Publication Year :
- 2009
-
Abstract
- 1.1 µm-range high-speed oxide-VCSELs with InGaAs/GaAsP strain-compensated multiple quantum wells (MQWs) have been developed. 25 Gbit/s 100°C operation and high reliability over 3 000 h under 150°C were demonstrated. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 45
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 35861984
- Full Text :
- https://doi.org/10.1049/el:20093096