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25 Gbit/s 100°C operation of highly reliable InGaAs/GaAsP-VCSELs.

Authors :
Hatakeyama, H.
Akagawa, T.
Fukatsu, K.
Suzuki, N.
Tokutome, K.
Yashiki, K.
Anan, T.
Tsuji, M.
Source :
Electronics Letters (Institution of Engineering & Technology). 1/1/2009, Vol. 45 Issue 1, p45-46. 2p. 4 Graphs.
Publication Year :
2009

Abstract

1.1 µm-range high-speed oxide-VCSELs with InGaAs/GaAsP strain-compensated multiple quantum wells (MQWs) have been developed. 25 Gbit/s 100°C operation and high reliability over 3 000 h under 150°C were demonstrated. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00135194
Volume :
45
Issue :
1
Database :
Academic Search Index
Journal :
Electronics Letters (Institution of Engineering & Technology)
Publication Type :
Academic Journal
Accession number :
35861984
Full Text :
https://doi.org/10.1049/el:20093096