CARACTERIZACIÓN ELÉCTRICA DE PELÍCULAS SEMICONDUCTORAS DE Ga1-xInxAsySb1-y.

Authors :: Segura, J.
Tirado-Mejía, I.
Ortiz, C.
Espinosa Arbeláez, D. G.
Villada, A.
Gutiérrez, D. F.
Gómez, M. E.
Ariza-Calderón, H.
Source :: Revista Colombiana de Física. 2006, Vol. 38 Issue 2, p505-508. 4p.
Publication Year :: 2006
Abstract: By means of the Van der Pauw method we found the sign and the Hall carrier density of a set of Gal-xInxAsySbl-y films. The samples were grown by Liquid Phase Epitaxy technique over single crystal GaSb;Te (100) substrates. All samples presented in this work were found to be n-type, and the calculated volume densities show strongly doped films. The characteristic I-V curves have a non linear behavior, for both Ag and Au electric contacts. The line shape is typical of Schottky barrier, been Ag a better option for the Schottky device. [ABSTRACT FROM AUTHOR]