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CARACTERIZACIÓN ELÉCTRICA DE PELÍCULAS SEMICONDUCTORAS DE Ga1-xInxAsySb1-y.
- Source :
-
Revista Colombiana de Física . 2006, Vol. 38 Issue 2, p505-508. 4p. - Publication Year :
- 2006
-
Abstract
- By means of the Van der Pauw method we found the sign and the Hall carrier density of a set of Gal-xInxAsySbl-y films. The samples were grown by Liquid Phase Epitaxy technique over single crystal GaSb;Te (100) substrates. All samples presented in this work were found to be n-type, and the calculated volume densities show strongly doped films. The characteristic I-V curves have a non linear behavior, for both Ag and Au electric contacts. The line shape is typical of Schottky barrier, been Ag a better option for the Schottky device. [ABSTRACT FROM AUTHOR]
- Subjects :
- *HALL effect
*DENSITY
*LIQUID phase epitaxy
*CRYSTALS
*SCHOTTKY barrier diodes
Subjects
Details
- Language :
- Spanish
- ISSN :
- 01202650
- Volume :
- 38
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Revista Colombiana de Física
- Publication Type :
- Academic Journal
- Accession number :
- 36304385