Cite
Minipressure sensor using AlGaN/GaN high electron mobility transistors.
MLA
Hung, S. C., et al. “Minipressure Sensor Using AlGaN/GaN High Electron Mobility Transistors.” Applied Physics Letters, vol. 94, no. 4, Jan. 2009, p. N.PAG. EBSCOhost, https://doi.org/10.1063/1.3072606.
APA
Hung, S. C., Chou, B. H., Chang, C. Y., Lo, C. F., Chen, K. H., Wang, Y. L., Pearton, S. J., Dabiran, A., Chow, P. P., Chi, G. C., & Ren, F. (2009). Minipressure sensor using AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 94(4), N.PAG. https://doi.org/10.1063/1.3072606
Chicago
Hung, S. C., B. H. Chou, C. Y. Chang, C. F. Lo, K. H. Chen, Y. L. Wang, S. J. Pearton, et al. 2009. “Minipressure Sensor Using AlGaN/GaN High Electron Mobility Transistors.” Applied Physics Letters 94 (4): N.PAG. doi:10.1063/1.3072606.