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Low-temperature annealing effects on (Ga,Mn)As/Zn-GaAs superlattice structures grown on GaAs(001) substrates
- Source :
-
Journal of Crystal Growth . Jan2009, Vol. 311 Issue 3, p933-936. 4p. - Publication Year :
- 2009
-
Abstract
- Abstract: (Ga,Mn)As/Zn-doped GaAs superlattices (SLs) have been prepared by molecular beam epitaxy (MBE), and the effect of low-temperature thermal annealing on their structural, electrical, and magnetic properties has been investigated. The SL structures studied in this work consists of 5-periods of 20-nm (Ga,Mn)As/5-nm GaAs. In order to introduce extra holes in (Ga,Mn)As layers, the GaAs spacer layers were doped with Zn acceptor atoms. Low-temperature thermal annealing was also performed to increase the hole concentration by reducing lattice defects like Mn interstitials and As antisite defects in (Ga,Mn)As layers. As-grown SL sample showed a ferromagnetic transition temperature T C of ∼50K, and the presence of noticeable abrupt change in magnetization around ∼35K in the M–T curve which is possibly due to the rotation of in-plane uniaxial anisotropy with changing temperature. Low-temperature annealing led to an increase in T C up to 65K accompanied with a decrease in the resistivity. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 311
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 36540602
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2008.09.111