Back to Search Start Over

Comparison of Measurement Techniques for Linewidth Metrology on Advanced Photomasks.

Authors :
Smith, Stewart
Tsiamis, Andreas
McCallum, Martin
Hourd, Andrew C.
Stevenson, J. T. M.
Walton, Anthony J.
Dixson, Ronald G.
Allen, Richard A.
Potzick, James E.
Cresswell, Michael W.
Orji, Ndubuisi G.
Source :
IEEE Transactions on Semiconductor Manufacturing. Feb2009, Vol. 22 Issue 1, p72-79. 8p. 2 Diagrams, 1 Chart, 8 Graphs.
Publication Year :
2009

Abstract

This paper compares electrical, optical, and atomic force microscope (AFM) measurements of critical dimension (CD) made on a chrome on quartz photomask. Test structures suitable for direct, on-mask electrical probing have been measured using the above three techniques. These include cross-bridge linewidth structures and pairs of Kelvin bridge resistors designed to investigate dimensional mismatch. Overall, the results show very good agreement between the electrical measurements and those made with a calibrated CD-AFM system, while the optical metrology system overestimates the measured width. The uncertainty in each of the measurements has been considered, and for the first time an attempt has been made to describe the levels and sources of uncertainty in the electrical measurement of CD on advanced binary photomasks. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
08946507
Volume :
22
Issue :
1
Database :
Academic Search Index
Journal :
IEEE Transactions on Semiconductor Manufacturing
Publication Type :
Academic Journal
Accession number :
36596328
Full Text :
https://doi.org/10.1109/TSM.2008.2010733