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Evaluation of Si and SiC SGTOs for High-Action Army Applications.
- Source :
-
IEEE Transactions on Magnetics . Jan2009 Part 2 of 2, Vol. 45 Issue 1, p402-406. 5p. 1 Chart, 1 Graph. - Publication Year :
- 2009
-
Abstract
- The U.S. Army Research Laboratory has been exploring silicon and silicon carbide supergate turn-off thyristors (SGTOs) for high-power pulse switching required by Army survivability and lethality applications. Silicon SGTOs (3.5 cm²) were pulsed at 5 kA with a half-sine current waveform measuring 1 ms at the base. The recovery time, or Tq, of the devices was evaluated from the point at which the main current pulse fell to zero. Using a driver designed to provide both turn-on and turn-off signals, the Tq was reduced to 10 μs. Smaller silicon carbide SGTOs (0.16 cm²) were similarly evaluated for wide-pulse performance. They were switched several times at a peak current above 300 A, with an unassisted Tq time of 30 μs. This paper provides details of the aforementioned pulse switching as well as a description of continuing evaluations involving parallel devices and larger test beds. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189464
- Volume :
- 45
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Magnetics
- Publication Type :
- Academic Journal
- Accession number :
- 36665784
- Full Text :
- https://doi.org/10.1109/TMAG.2008.2008549