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Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode
- Source :
-
Physica E . Feb2009, Vol. 41 Issue 4, p635-639. 5p. - Publication Year :
- 2009
-
Abstract
- Abstract: n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diodes have been fabricated on p+-Si substrates. The CuAlO2 thin film was deposited by dc-magnetron sputtering while the ZnO nanorods (NRs) were fabricated using the vapor-phase transport method. The current–voltage characteristics of the devices showed good rectifying behavior with a high forward-to-reverse current ratio of around 120 at ±7V. Strong ultraviolet electro-luminescence centered at ∼390nm and a broad green-band emission were observed from the diode at room-temperature. The p-CuAlO2 layer was found to facilitate hole injection from p+-Si into n-ZnO while confining the electrons at ZnO/CuAlO2 interface, thus effectively enhancing the recombination emission efficiency in ZnO NRs. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 13869477
- Volume :
- 41
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Physica E
- Publication Type :
- Academic Journal
- Accession number :
- 36782581
- Full Text :
- https://doi.org/10.1016/j.physe.2008.10.017