ENERGÍA DE ENLACE DE UNA IMPUREZA HIDROGENOIDE EN UN POZO CUÁNTICO DE GaAs/Inx Ga1-xAs/GaAs.

In this work, the binding energy of a hydrogenic impurity in a GaAs/InxGa1-xAs quantum well is calculated as a function of the well width and the impurity position inside the quantum well. The calculations are performed within the effective-mass approximation and using a variational method for different In concentrations (0 < x < 0.4) in GaAs. We have kept in mind that the confinement potential is modified by the strain due to the differences of the lattice constants between GaAs and the InxGa1-xAs, which is included in the confinement potential as suggested by Atanasov. We found that the impurity binding energy is between 8 meV and 10meV, for well widths between 50A and 150A. This range of energy is characteristic of the infrared spectrum. We also found that the impurity binding energy varies with the impurity location in the well region, being greater for on-center and lower for on-edge impurity position. [ABSTRACT FROM AUTHOR]