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Downscaling of Pb (Zr,Ti)O[sub3] film thickness for low-voltage ferroelectric capacitors: Effect of charge relaxation at the interfaces.
- Source :
-
Journal of Applied Physics . 8/15/2000, Vol. 88 Issue 4, p2154. 3p. 3 Graphs. - Publication Year :
- 2000
-
Abstract
- Addresses issues regarding low-voltage memory applications of ferroelectric thin films. Discussion on the size effect on polarization switching; Impact of local injection of charge into the interfacial layers of the ferroelectric film on polarization switching; Methods for enhancing entrapped charge relaxation.
- Subjects :
- *FERROELECTRIC thin films
*LOW voltage systems
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 88
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 3691992
- Full Text :
- https://doi.org/10.1063/1.1305854