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A High-Linearity Single-Pole-Double-Throw Pseudomorphic HEMT Switch Based on Tunable Field-Plate Voltage Technology.
- Source :
-
IEEE Transactions on Electron Devices . Apr2009, Vol. 56 Issue 4, p541-545. 5p. - Publication Year :
- 2009
-
Abstract
- A high-isolation high-linearity GaAs pseudomorphic high-electron mobility transistor single-pole-double-throw micro-wave switch was developed using a tunable field-plate (FP) bias voltage technology. In this paper, a piece of FP metal was deposited between 0.15-μm-long gate and drain terminals. An extra FP-induced depletion region was generated to suppress the harmonics of switching associated with OFF-state operation. When switching into the ON-state, the FP switch is associated with an insertion loss similar to that of the standard switch below 6 GHz. However, the isolation performance can be enhanced by 10 dB using an FP technology, which reduces the OFF-state capacitance that is produced by the extra FP-induced depletion region. The FP provides an additional mechanism to suppress the power of the second-and third-order harmonics in the OFF-state with slight ON-state insertion-loss degradation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 56
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 37282812
- Full Text :
- https://doi.org/10.1109/TED.2009.2014189