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A multioctave (0.5–12.0 GHz) low-noise transistor amplifier.
- Source :
-
Instruments & Experimental Techniques . Mar2009, Vol. 52 Issue 2, p200-203. 4p. 3 Diagrams, 3 Graphs. - Publication Year :
- 2009
-
Abstract
- An effective method of computer calculation and optimization of characteristics of multioctave low-noise transistor amplifiers is presented. The method was used to design a three-stage amplifier built on the basis of microstrip technology using packaged transistors and chip resistors and capacitors. In a 0.5- to 12.0-GHz frequency band, the following characteristics are obtained: a noise ratio of 2.2–3.2 dB, a gain of >25.6 dB, a gain flatness of ±1.2 dB, a voltage standing wave ratio of <2.8 and <2.2 at the input and output, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00204412
- Volume :
- 52
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Instruments & Experimental Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 38608973
- Full Text :
- https://doi.org/10.1134/S0020441209020109