A multioctave (0.5–12.0 GHz) low-noise transistor amplifier.

An effective method of computer calculation and optimization of characteristics of multioctave low-noise transistor amplifiers is presented. The method was used to design a three-stage amplifier built on the basis of microstrip technology using packaged transistors and chip resistors and capacitors. In a 0.5- to 12.0-GHz frequency band, the following characteristics are obtained: a noise ratio of 2.2–3.2 dB, a gain of >25.6 dB, a gain flatness of ±1.2 dB, a voltage standing wave ratio of <2.8 and <2.2 at the input and output, respectively. [ABSTRACT FROM AUTHOR]