Multiple plasmon resonances at terahertz frequencies from arrays of arsenic doped silicon dots

Abstract: Heavily doped silicon dots arrays have been fabricated and measured to investigate their resonance characteristics in the terahertz range. Multiple plasmon resonances have been observed for arrays of dots with different dimensions. The observed phenomenon provides evidence of the existence of bulk plasmon resonance of heavily doped silicon dots arrays at terahertz frequencies, and will have applications in the design of quasi-optical components. [Copyright &y& Elsevier]