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Nonlinear optical properties of Si nanocrystals embedded in SiO2 prepared by a cosputtering method.
- Source :
-
Journal of Applied Physics . May2009, Vol. 105 Issue 9, p093531-093536. 5p. 5 Graphs. - Publication Year :
- 2009
-
Abstract
- Nonlinear optical properties of Si nanocrystals (Si-ncs) doped SiO2 prepared by a cosputtering method were studied by z-scan technique in a femtosecond regime at around 1.6 eV. The nonlinear refractive index (n2) and nonlinear absorption coefficient (β) were strongly enhanced compared to those of bulk Si and found to be about ∼2×10-13 cm2/W and ∼0.8 cm/GW, respectively. In the photon energy region from 1.48 to 1.65 eV, the n2 and β spectra followed the absorption spectra and no enhancement was observed in the band-edge photoluminescence region. In the diameter range of 2.7–5.4 nm, the size dependence of n2 coincided well with that calculated by a pseudopotential approach, suggesting that the discrete energy states of Si-ncs are responsible for the observed enhanced optical nonlinearity. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 105
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 39786008
- Full Text :
- https://doi.org/10.1063/1.3125446