EFFECT OF TANTALUM ON FERROELECTRIC PHASE TRANSITION BEHAVIOR OF SrBi4Ti4O15 SINTERED DISCS.

Tantalum modified strontium bismuth titanate ceramic discs with general formula SrBi4Ti(4-5x)Ta4xO15 with x = 0, 0.1, 0.2 and 0.3 have been prepared through solid state reaction method. The samples are poled and dielectric constant, loss and AC conductivity measurements are done in the temperature region (30–600°C). Ta5+ doping brought out interesting changes in dielectric phase transition behavior of the samples. Dielectric loss and conductivity measurements indicate the presence of charged defects. The results indicate changes in the distortion of the lattice. The distortion is calculated from the changes in the Curie temperature. AC conductivity results are understood in terms of the unoccupied sites and oxygen vacancies that are present in the samples. [ABSTRACT FROM AUTHOR]