Cite
Amorphous ternary rare-earth gate oxides for future integration in MOSFETs
MLA
Lopes, J. M. J., et al. “Amorphous Ternary Rare-Earth Gate Oxides for Future Integration in MOSFETs.” Microelectronic Engineering, vol. 86, no. 7–9, July 2009, pp. 1646–49. EBSCOhost, https://doi.org/10.1016/j.mee.2009.03.065.
APA
Lopes, J. M. J., Durğun Özben, E., Roeckerath, M., Littmark, U., Lupták, R., Lenk, S., Luysberg, M., Besmehn, A., Breuer, U., Schubert, J., & Mantl, S. (2009). Amorphous ternary rare-earth gate oxides for future integration in MOSFETs. Microelectronic Engineering, 86(7–9), 1646–1649. https://doi.org/10.1016/j.mee.2009.03.065
Chicago
Lopes, J.M.J., E. Durğun Özben, M. Roeckerath, U. Littmark, R. Lupták, St. Lenk, M. Luysberg, et al. 2009. “Amorphous Ternary Rare-Earth Gate Oxides for Future Integration in MOSFETs.” Microelectronic Engineering 86 (7–9): 1646–49. doi:10.1016/j.mee.2009.03.065.