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Electron-carrier generation by edge dislocations in InN films: First-principles study
- Source :
-
Journal of Crystal Growth . May2009, Vol. 311 Issue 10, p2767-2771. 5p. - Publication Year :
- 2009
-
Abstract
- Abstract: Electronic structures of edge dislocations in InN films are studied using the first-principles calculation. We found that dangling-bond states of In atoms localized in the dislocation core are located above the conduction-band bottom and thus supplies the electron carriers to the conduction band of bulk InN, in agreement with the experimental suggestion by Wang et al. [Appl. Phys. Lett. 90 (2007) 151901]. Moreover, it is shown that the Fermi energy in the conduction band has the tendency to be pinned at the energy positions of N-related dangling-bond states. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 311
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 40637196
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2009.01.019