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Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode.

Authors :
Hangbing Lv
Ming Wang
Haijun Wan
Yali Song
Wenjing Luo
Peng Zhou
Tingao Tang
Yinyin Lin
Huang, R.
Song, S.
Wu, J. G.
Wu, H. M.
Chi, M. H.
Source :
Applied Physics Letters. 5/25/2009, Vol. 94 Issue 21, p213502. 3p. 1 Diagram, 3 Graphs.
Publication Year :
2009

Abstract

We investigated the switching performance of Cu-oxide films with Al, Pt, and Ti electrodes. Compared with Pt electrode, the Al electrode shows better stability, preferable endurance, and larger resistance ratio. An interface AlOx layer is detected by transmission electron microscopy and Auger electron spectroscopy. This layer can strongly affect the movement of oxygen vacancies. However, the sample with pure Ti electrode almost has no switching characteristics. Ti/TiN electrode with thin Ti exhibits good switching behavior. The thickness control of Ti layer is quite critical. So we suggest that the oxygen diffusion in electrode is another important factor for switching performance. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
94
Issue :
21
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
40637754
Full Text :
https://doi.org/10.1063/1.3142392