Spatially and tensor-resolved Raman analysis for the determination of phonon deformation potentials on the microscopic scale in Si single-crystal.

A spatial and tensor deconvolution procedure is proposed for the analysis of cumulative Raman frequency shifts recorded in silicon surface zones containing a Blister-type contact stress field. The procedure is further applied to the quantitative determination of the three independent values of phonon deformation potentials for the Si lattice. Phonon potentials are experimentally obtained for an (110) oriented Si single-crystal containing a pyramidal (Vickers) indentation print. A cross-polarized laser microprobe operating at a visible wavelength enabled us to precisely retrieve the three independent phonon potentials for Si. The presented method requires a minimum amount of material and can be applied with a single measurement set, while previously published characterizations required the availability of relatively large and differently oriented samples. The proposed experimental method is particularly suitable for in situ assessments of phonon deformation potentials in thin/opaque samples with high refractive index. [ABSTRACT FROM AUTHOR]