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On-wafer characterization of In[sub 0.52]Al[sub 0.48]As/In[sub 0.53]Ga[sub 0.47]As....
- Source :
-
Applied Physics Letters . 7/10/1995, Vol. 67 Issue 2, p262. 2p. 1 Black and White Photograph, 1 Diagram, 1 Graph. - Publication Year :
- 1995
-
Abstract
- Investigates the fabrication of indium[sub 0.52]aluminum[sub 0.48]arsenic/indium[sub 0.53]gallium[sub 0.47]arsenic modulation-doped field-effect transistors. Incorporation of photoconductive switches; Details on the switching time of the T-gate device; Utilization of on-wafer integration of high-speed test fixtures.
- Subjects :
- *MODULATION-doped field-effect transistors
*JIGS & fixtures
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 67
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4167923
- Full Text :
- https://doi.org/10.1063/1.114687