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Photoluminescence from wurtzite GaN under hydrostatic pressure.
- Source :
-
Applied Physics Letters . 7/17/1995, Vol. 67 Issue 3, p380. 3p. 1 Chart, 2 Graphs. - Publication Year :
- 1995
-
Abstract
- Examines the photoluminescence (PL) spectrum of undoped epitaxial wurtzite GaN (gallium nitride) layers on sapphire for applied hydrostatic pressures. Characteristics of GaN; Relevance of pressure dependence of the PL of GaN; Magnitudes of the linear and quadratic pressure coefficients for wurtzite GaN.
- Subjects :
- *PHOTOLUMINESCENCE
*EPITAXY
*GALLIUM nitride
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 67
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4177158
- Full Text :
- https://doi.org/10.1063/1.114635