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Al/Al[sub 2]O[sub 3]/Al single electron transistors operable up to 30 K utilizing anodization....
- Source :
-
Applied Physics Letters . 1/8/1996, Vol. 68 Issue 2, p275. 3p. 2 Diagrams, 3 Graphs. - Publication Year :
- 1996
-
Abstract
- Proposes an anodization controlled miniaturization enhancement technique in fabricating ultrasmall tunnel junctions. Details on aluminum oxide barrier utilized in tunnel junctions; Generation of single electron transistor; Correlation between oxidized layer and anodization voltage on aluminum film thickness.
- Subjects :
- *ANODIC oxidation of metals
*JUNCTION transistors
*ALUMINUM oxide
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 68
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4178050
- Full Text :
- https://doi.org/10.1063/1.115661