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Saturation behavior of the defect density in hydrogenated amorphous silicon by continuous and....

Authors :
Jong-Hwan Yoon
Kim, H.L.
Source :
Applied Physics Letters. 5/29/1995, Vol. 66 Issue 22, p3021. 3p. 3 Graphs.
Publication Year :
1995

Abstract

Evaluates the measurements of saturated defect density in hydrogenated amorphous silicon (a-Si:H) using continuous and pulsed light illumination. Difference between pulsed and continuous wave light-induced saturation values of defect density; Creation of defects by light illumination; Details on the undoped a-Si:H thin films.

Details

Language :
English
ISSN :
00036951
Volume :
66
Issue :
22
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4187024
Full Text :
https://doi.org/10.1063/1.114264