Back to Search Start Over

Microscopic study of the surfactant-assisted Si, Ge epitaxial growth.

Authors :
Cao, R.
Yang, X.
Source :
Applied Physics Letters. 11/9/1992, Vol. 61 Issue 19, p2347. 3p. 4 Graphs.
Publication Year :
1992

Abstract

Investigates the surfactant-assisted silicon (Si), germanium (Ge) epitaxial growth. Use of high resolution photoemission; Reduction of surface energy; Change in the position of antimony (Sb), Si, and Ge atoms; Segregation of the Sb atoms top the growth front.

Subjects

Subjects :
*EPITAXY
*SURFACE active agents
*ANTIMONY
*SILICON
*GERMANIUM

Details

Language :
English
ISSN :
00036951
Volume :
61
Issue :
19
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4221410
Full Text :
https://doi.org/10.1063/1.108239
Full Text Access
View/download PDF

Tools

Authors Abstract Subjects Details