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Photoluminescence determination of the nitrogen doping concentration in 6H-SiC.

Authors :
Henry, A.
Kordina, O.
Source :
Applied Physics Letters. 11/7/1994, Vol. 65 Issue 19, p2457. 3p. 3 Graphs.
Publication Year :
1994

Abstract

Presents a calibration procedure for the nitrogen impurity in 6 hydrogen-silicon carbide. Validity of the calibration for a large range of n-type doping; Effects of excitation density, temperature during the photoluminescence experiments and the observation of acceptor related lines; Characterization of impurities in semiconductors.

Subjects

Subjects :
*IMPURITY centers
*NITROGEN
*SILICON carbide

Details

Language :
English
ISSN :
00036951
Volume :
65
Issue :
19
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4221661
Full Text :
https://doi.org/10.1063/1.112706
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