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Growth and characterization of Zn[sub 1-x]Mn[sub x]Te epilayers grown by hot wall epitaxy on....
- Source :
-
Applied Physics Letters . 5/11/1992, Vol. 60 Issue 19, p2368. 3p. 1 Chart, 3 Graphs. - Publication Year :
- 1992
-
Abstract
- Investigates the growth of Zn[sub 1-x]Mn[sub x]Te epilayer films grown by hot wall epitaxy on (001) GaAs substrates. Percentage concentration of manganese (Mn); Determination of Mn content by optical reflection and X-ray diffraction; Details on the relative tilt between the epilayer and the substrate.
- Subjects :
- *EPITAXY
*SEMICONDUCTOR films
*GALLIUM arsenide
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 60
- Issue :
- 19
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4227366
- Full Text :
- https://doi.org/10.1063/1.107028