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Temperature behavior of a bulk InGaAsP/InP ridge waveguide structure for polarization....
- Source :
-
Applied Physics Letters . 11/28/1994, Vol. 65 Issue 22, p2762. 3p. 1 Diagram, 3 Graphs. - Publication Year :
- 1994
-
Abstract
- Investigates the temperature behavior of indium gallium arsenic phosphide/indium phosphide ridge waveguide structure designed for polarization insensitive semiconductor optical amplifier. Accounts on laser threshold dependence on temperature; Usage of diode structure in the experiment; Discussion on the physical origins of temperature dependence.
- Subjects :
- *WAVEGUIDES
*OPTICAL amplifiers
THERMAL properties of semiconductors
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 65
- Issue :
- 22
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4233184
- Full Text :
- https://doi.org/10.1063/1.113031