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Role of the hydrogen plasma treatment in layer-by-layer deposition of microcrystalline silicon.
- Source :
-
Applied Physics Letters . 12/8/1997, Vol. 71 Issue 23, p3403. 3p. 2 Diagrams, 2 Charts, 3 Graphs. - Publication Year :
- 1997
-
Abstract
- Investigates the role of hydrogen in hydrogenated microcrystalline silicon films (muc-Si:H) formation using hydrogen plasma treatments. Induction of a-Si:H layer by hydrogen plasma conditions; Observation of the Raman spectra in a-Si:H films; Implications for determining the cause of atomic hydrogen-induced subsurface reaction.
- Subjects :
- *SEMICONDUCTOR films
*SILICON
*HYDROGEN
*RAMAN effect
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 71
- Issue :
- 23
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4233306
- Full Text :
- https://doi.org/10.1063/1.120324