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Atomic layer epitaxy of AlAs using thermally decomposed gas molecules.
- Source :
-
Applied Physics Letters . 1/20/1992, Vol. 60 Issue 3, p377. 3p. 1 Diagram, 3 Graphs. - Publication Year :
- 1992
-
Abstract
- Investigates the atomic layer epitaxy (ALE) of aluminum arsenide using a thermal-cracking tube. Employment of thermally decomposed gas molecules in the analysis; Saturation of AlAs by AsH[sub 3] pulse duration; Adhesion of Al to thermal-cracking tube; Analysis on the cracking kinetics using a quadruple mass spectrometer.
- Subjects :
- *EPITAXY
*ARSENIDES
*CHEMICAL kinetics
THERMAL properties of semiconductors
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 60
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4240654
- Full Text :
- https://doi.org/10.1063/1.106662