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Atomic layer epitaxy of AlAs using thermally decomposed gas molecules.

Authors :
Yokoyama, Haruki
Shinohara, Masanori
Source :
Applied Physics Letters. 1/20/1992, Vol. 60 Issue 3, p377. 3p. 1 Diagram, 3 Graphs.
Publication Year :
1992

Abstract

Investigates the atomic layer epitaxy (ALE) of aluminum arsenide using a thermal-cracking tube. Employment of thermally decomposed gas molecules in the analysis; Saturation of AlAs by AsH[sub 3] pulse duration; Adhesion of Al to thermal-cracking tube; Analysis on the cracking kinetics using a quadruple mass spectrometer.

Subjects

Subjects :
*EPITAXY
*ARSENIDES
*CHEMICAL kinetics
THERMAL properties of semiconductors

Details

Language :
English
ISSN :
00036951
Volume :
60
Issue :
3
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4240654
Full Text :
https://doi.org/10.1063/1.106662
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