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Spin Dependent Tunnel Junctions for Memory and Read-Head Applications.
- Source :
-
IEEE Transactions on Magnetics . Sep2000 Part 1 of 2, Vol. 36 Issue 5, p2796. 6p. 2 Diagrams, 2 Charts, 9 Graphs. - Publication Year :
- 2000
-
Abstract
- Presents a study where the changes in the tunnel magnetoresistance (TMR) values with annealing temperatures were observed to be associated with changes in barrier parameters. Overview of tunnel junction random access memories; Estimated head parameters for 100 gigabit.
- Subjects :
- *MAGNETORESISTANCE
*SIMULATED annealing
Subjects
Details
- Language :
- English
- ISSN :
- 00189464
- Volume :
- 36
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Magnetics
- Publication Type :
- Academic Journal
- Accession number :
- 4250015