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Schottky barrier heights and conduction-band offsets of In[sub 1-x]Ga[sub x]As[sub 1-y]P[sub y]....

Authors :
Jong-Kwon Lee
Yong-Hoon Cho
Source :
Applied Physics Letters. 8/18/1997, Vol. 71 Issue 7, p912. 3p. 1 Chart, 2 Graphs.
Publication Year :
1997

Abstract

Evaluates the Schottky barrier heights and conduction-band offsets of In[sub 1-x]Ga[sub x]As[sub 1-y]P[sub y] epilayers. Growth of epilayers on gallium arsenide substrates; Dependence of Schottky barrier heights on the composition of the substrate material; Correlation between metal-semiconductor and semiconductor-semiconductor heterointerfaces.

Details

Language :
English
ISSN :
00036951
Volume :
71
Issue :
7
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4255183
Full Text :
https://doi.org/10.1063/1.119686