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Schottky barrier heights and conduction-band offsets of In[sub 1-x]Ga[sub x]As[sub 1-y]P[sub y]....
- Source :
-
Applied Physics Letters . 8/18/1997, Vol. 71 Issue 7, p912. 3p. 1 Chart, 2 Graphs. - Publication Year :
- 1997
-
Abstract
- Evaluates the Schottky barrier heights and conduction-band offsets of In[sub 1-x]Ga[sub x]As[sub 1-y]P[sub y] epilayers. Growth of epilayers on gallium arsenide substrates; Dependence of Schottky barrier heights on the composition of the substrate material; Correlation between metal-semiconductor and semiconductor-semiconductor heterointerfaces.
- Subjects :
- *CONDUCTION bands
*SCHOTTKY barrier diodes
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 71
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4255183
- Full Text :
- https://doi.org/10.1063/1.119686