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Modulation of one-dimensional electron density in n-AlGaAs/GaAs edge quantum wire transistor.

Authors :
Nakamura, Y.
Tsuchiya, M.
Source :
Applied Physics Letters. 5/9/1994, Vol. 64 Issue 19, p2552. 3p. 3 Diagrams, 3 Graphs.
Publication Year :
1994

Abstract

Examines the modulation of one-dimensional electron density in n-aluminum gallium arsenide/gallium arsenide edge quantum wire transistor. Preparation of the wires by molecular beam epitaxy; Demonstration of a field effect transistor action; Display of nonlinearity caused by the magnetic depopulation of one-dimensional subbands.

Details

Language :
English
ISSN :
00036951
Volume :
64
Issue :
19
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4266424
Full Text :
https://doi.org/10.1063/1.111571