Thermal stability of strained In[sub x]Ga[sub 1-x]As/In[sub y]Al[sub 1-y]As/InP heterostructures.

Examines the thermal stability of indium (In)-gallium-arsenic (As) and In-aluminum-As on In-phosphorus strained layers. Analysis on epilayer and interface quality as a function of annealing cycle; Use of high-resolution x-ray diffraction and electron mobility measurements; High crystalline quality retention of pseudomorphic heterostructures.