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Enhancement of electrical activation of ion-implanted phosphorus in Si(100) through two-step....
- Source :
-
Applied Physics Letters . 8/23/1993, Vol. 63 Issue 8, p1125. 3p. 3 Graphs. - Publication Year :
- 1993
-
Abstract
- Examines an enhancement of ion-implanted phosphorus activation in silicon through a two-step thermal annealing process. Description of a two-step process; Implication of regrowth process separation from the activation process for electrical activation; Consideration of ion implantation combined with thermal annealing as a standard doping process.
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 63
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4294042
- Full Text :
- https://doi.org/10.1063/1.109801