Back to Search
Start Over
Growth and structural characterization of embedded InAsSb on GaAs-coated patterned...
- Source :
-
Applied Physics Letters . 3/4/1991, Vol. 58 Issue 9, p928. 3p. 7 Black and White Photographs, 3 Diagrams. - Publication Year :
- 1991
-
Abstract
- Investigates the molecular beam epitaxial growth of InAsSb on gallium arsenide (GaAs)-coated patterned silicon (Si) substrates. Comparison of the InAsSb epilayer morphology for different substrate conditions; Threaded defect density of the InAsSb layers; Evidence of a regular array of misfit dislocations.
- Subjects :
- *MOLECULAR beam epitaxy
*GALLIUM arsenide
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 58
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4303276
- Full Text :
- https://doi.org/10.1063/1.104480