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Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by....

Authors :
Heinrichsdorff, F.
Mao, M.-H.
Kirstaedter, N.
Krost, A.
Bimberg, D.
Kosogov, A.O.
Werner, P.
Source :
Applied Physics Letters. 7/7/1997, Vol. 71 Issue 1, p22. 3p. 2 Black and White Photographs, 3 Graphs.
Publication Year :
1997

Abstract

Examines quantum dot (QD) lasers made of stacked indium arsenide dots grown by metalorganic chemical vapor deposition. Increase photoluminescence intensity upon thin layer deposition; Allowance of continuous wave operation at room temperature in lasers with threefold stacked QD; Temperature dependence of the lasing energies.

Details

Language :
English
ISSN :
00036951
Volume :
71
Issue :
1
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4319690
Full Text :
https://doi.org/10.1063/1.120556