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Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by....
- Source :
-
Applied Physics Letters . 7/7/1997, Vol. 71 Issue 1, p22. 3p. 2 Black and White Photographs, 3 Graphs. - Publication Year :
- 1997
-
Abstract
- Examines quantum dot (QD) lasers made of stacked indium arsenide dots grown by metalorganic chemical vapor deposition. Increase photoluminescence intensity upon thin layer deposition; Allowance of continuous wave operation at room temperature in lasers with threefold stacked QD; Temperature dependence of the lasing energies.
- Subjects :
- *LASERS
*QUANTUM dots
*CHEMICAL vapor deposition
*ARSENIDES
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 71
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4319690
- Full Text :
- https://doi.org/10.1063/1.120556