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OPTICAL TRANSITION OF POROUS SILICON PREPARED AT DIFFERENT ANODIZATION TEMPERATURES.
- Source :
-
Surface Review & Letters . Jun2009, Vol. 16 Issue 3, p351-354. 4p. 4 Graphs. - Publication Year :
- 2009
-
Abstract
- Photoluminescence, photoabsorption, and X-ray photoelectron spectroscopic study revealed that an optical transition of porous silicon from red-shift to blue-shift, and Si-2p binding energy transition from low to high at a critical anodization temperature, 343 K. Possible origin for the reverse variations happening at temperature below and above the critical temperature is discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0218625X
- Volume :
- 16
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Surface Review & Letters
- Publication Type :
- Academic Journal
- Accession number :
- 43220979
- Full Text :
- https://doi.org/10.1142/S0218625X09012706